Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1580
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dc.contributor.authorChoulis, Stelios A.-
dc.contributor.authorKim, Yong Rok-
dc.contributor.authorNelson, Jenny K.-
dc.contributor.otherΧούλης, Στέλιος Α.-
dc.date.accessioned2013-03-06T16:46:56Zen
dc.date.accessioned2013-05-17T05:22:22Z-
dc.date.accessioned2015-12-02T10:00:56Z-
dc.date.available2013-03-06T16:46:56Zen
dc.date.available2013-05-17T05:22:22Z-
dc.date.available2015-12-02T10:00:56Z-
dc.date.issued2004-10-29-
dc.identifier.citationApplied physics letters, 2004, vol. 85, no.17, pp. 3890-3892en_US
dc.identifier.issn10773118-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1580-
dc.description.abstractThe carrier transport of carefully purified regioregular poly(3-hexylthiophene) films has been studied using time-of-flight photocurrent measurements. We find balanced ambipolar transport with a room-temperature mobility for holes of 3×10−4 cm2 V−1 s−1 and for electrons of 1.5×10−4 cm2 V−1 s−1 at electric fields ⩾105 V∕cm. The transport is relatively field independent and weakly temperature dependent, pointing to a high degree of chemical regioregularity and purity. These factors make poly(3-hexylthiophene) attractive for use in a range of electronic applicationsen_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rights© American Institute of Physicsen_US
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/us/*
dc.subjectElectric fieldsen_US
dc.subjectIonizationen_US
dc.subjectLight emitting diodesen_US
dc.subjectFilmsen_US
dc.titleHigh ambipolar and balanced carrier mobility in regioregular poly(3-hexylthiophene)en_US
dc.typeArticleen_US
dc.affiliationImperial College Londonen
dc.collaborationImperial College Londonen_US
dc.subject.categoryENGINEERING AND TECHNOLOGYen_US
dc.journalsHybrid Open Accessen_US
dc.countryGreeceen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1063/1.1805175en_US
dc.dept.handle123456789/54en
dc.relation.issue17en_US
dc.relation.volume85en_US
cut.common.academicyear2004-2005en_US
dc.identifier.spage3890en_US
dc.identifier.epage3892en_US
item.fulltextNo Fulltext-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.languageiso639-1en-
crisitem.journal.journalissn1077-3118-
crisitem.journal.publisherAmerican Institute of Physics-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
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