Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1493
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Voulgarakis, Nikolaos K. | - |
dc.contributor.author | Hadjisavvas, George C. | - |
dc.contributor.author | Kelires, Pantelis C. | - |
dc.contributor.other | Κελίρης, Παντελής | - |
dc.date.accessioned | 2013-03-04T12:39:03Z | en |
dc.date.accessioned | 2013-05-17T05:22:50Z | - |
dc.date.accessioned | 2015-12-02T10:06:36Z | - |
dc.date.available | 2013-03-04T12:39:03Z | en |
dc.date.available | 2013-05-17T05:22:50Z | - |
dc.date.available | 2015-12-02T10:06:36Z | - |
dc.date.issued | 2004-03-23 | - |
dc.identifier.citation | Physical Review B - Condensed Matter and Materials Physics, 2004, vol. 69, no. 11 | en_US |
dc.identifier.issn | 10980121 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.14279/1493 | - |
dc.description.abstract | We investigate numerically existence and dynamical properties of intrinsic localization in crystalline silicon through the use of interatomic Tersoff force fields. We find a band of intrinsic localized modes (discrete breathers) each with lifetime of at least 60 ps in the spectral region 548-578 cm -1, located just above the zone end phonon frequency calculated at 536 cm-1. The localized modes extend to more than second neighbors and involve pair central-atom compressions in the range from 6.1% to 8.6% of the covalent bond length per atom. Finite temperature simulations show that they remain robust to room temperatures or higher with a typical lifetime equal to 6 ps. | en_US |
dc.format | en_US | |
dc.language.iso | en | en_US |
dc.relation.ispartof | Physical Review B | en_US |
dc.rights | © The American Physical Society | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | Silicon | en_US |
dc.subject | Mathematical analysis | en_US |
dc.subject | Phonons | en_US |
dc.title | Computational investigation of intrinsic localization in crystalline Si | en_US |
dc.type | Article | en_US |
dc.affiliation | University of Crete | en |
dc.collaboration | University of Crete | en_US |
dc.collaboration | Foundation for Research & Technology-Hellas (F.O.R.T.H.) | en_US |
dc.subject.category | Mechanical Engineering | en_US |
dc.journals | Hybrid Open Access | en_US |
dc.country | Greece | en_US |
dc.subject.field | Engineering and Technology | en_US |
dc.publication | Peer Reviewed | en_US |
dc.identifier.doi | 10.1103/PhysRevB.69.113201 | en_US |
dc.dept.handle | 123456789/54 | en |
dc.relation.issue | 11 | en_US |
dc.relation.volume | 69 | en_US |
cut.common.academicyear | 2004-2005 | en_US |
item.fulltext | No Fulltext | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | article | - |
item.languageiso639-1 | en | - |
crisitem.journal.journalissn | 2469-9969 | - |
crisitem.journal.publisher | American Physical Society | - |
crisitem.author.dept | Department of Mechanical Engineering and Materials Science and Engineering | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.orcid | 0000-0002-0268-259X | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
Appears in Collections: | Άρθρα/Articles |
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