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https://hdl.handle.net/20.500.14279/1400| Title: | High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm | Authors: | Choulis, Stelios A. Andreev, Aleksey D. Merrick, Michael L. |
metadata.dc.contributor.other: | Χούλης, Στέλιος Α. | Major Field of Science: | Engineering and Technology | Keywords: | Light emitting diodes;Electroluminescence;Indium compounds;Liquid phase epitaxy;Photolithography;Pressure--Measurement | Issue Date: | Feb-2003 | Source: | Applied physics letters, 2003, vol. 82, no. 8, pp. 1149-1151 | Volume: | 82 | Issue: | 8 | Start page: | 1149 | End page: | 1151 | Journal: | Applied Physics Letters | Abstract: | The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 μm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs | URI: | https://hdl.handle.net/20.500.14279/1400 | ISSN: | 10773118 | DOI: | 10.1063/1.1555276 | Rights: | © American Institute of Physics Attribution-NonCommercial-NoDerivs 3.0 United States |
Type: | Article | Affiliation: | University of Surrey | Affiliation : | Unicersity of Surrey |
| Appears in Collections: | Άρθρα/Articles |
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