Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/9664
Title: Shaping the composition profiles in heteroepitaxial quantum dots: Interplay of thermodynamic and kinetic effects
Authors: Georgiou, Christodoulos 
Leontiou, Theodoros 
Kelires, Pantelis C. 
Keywords: Epitaxial growth;Germanium;Kinetic theory;Monte Carlo methods
Category: Mechanical Engineering
Field: Engineering and Technology
Issue Date: 1-Jan-2014
Source: AIP Advances Volume 4, Issue 7, July 2014, Article number 077135
metadata.dc.doi: 10.1063/1.4891935
Abstract: Atomistic Monte Carlo simulations, coupling thermodynamic and kinetic effects, resolve a longstanding controversy regarding the origin of composition profiles in heteroepitaxial SiGe quantum dots. It is shown that profiles with cores rich in the unstrained (Si) component derive from near-equilibrium processes and intraisland diffusion. Profiles with cores rich in the strained (Ge) component are of nonequilibrium nature, i.e., they are strain driven but kinetically limited. They are shaped by the distribution of kinetic barriers of atomic diffusion in the islands. The diffusion pathways are clearly revealed for the first time. Geometrical kinetics play a minor role.
URI: http://ktisis.cut.ac.cy/handle/10488/9664
ISSN: 21583226
Rights: © 2014 Author(s).
Type: Article
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