Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/9309
Title: Composition and stress of SiGe nanostructures on curved substrates
Authors: Leontiou, Theodoros 
Kelires, Pantelis C. 
Keywords: Nanostructures;Curved substrates
Category: Mechanical Engineering
Field: Engineering and Technology
Issue Date: 16-Mar-2016
Publisher: American Physical Society
Source: Physical Review B - Condensed Matter and Materials Physics, 2016, Volume 93, Issue 12, Article number 125307
metadata.dc.doi: 10.1103/PhysRevB.93.125307
Abstract: Recent experimental studies of Ge nanoislands on silicon-on-insulator (SOI) substrates have provided a defect-free strain relaxation mechanism through the bending of the substrate. Here, using atomistic Monte Carlo simulations and analytical modeling, we couple this relaxation mechanism with interdiffusion and alloying and observe composition profiles that are completely different from those observed in flat nanoislands. Moreover, for comparable SOI and island thicknesses, intermixing can be greatly reduced and Ge content in the islands is highly preserved.
URI: http://ktisis.cut.ac.cy/handle/10488/9309
ISSN: 10980121
Rights: © 2016 American Physical Society.
Type: Article
Appears in Collections:Άρθρα/Articles

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