Please use this identifier to cite or link to this item:
|Title:||Equilibrium alloy properties by direct simulation: oscillatory segregation at the si-ge(100) 2×1 surface||Authors:||Tersoff, Jerry
Kelires, Pantelis C.
|Keywords:||Alloys||Issue Date:||1989||Publisher:||APS American Physical Society||Source:||Physical Review Letters,1989, Volume 63, Issue 11, Pages 1164-1167||Abstract:||We study surface and bulk equilibrium in Si-Ge alloys by direct simulation. The composition at a reconstructed (100) surface varies with depth in a complex oscillatory way. Lateral ordering occurs even in the fourth layer, driven by the local stress field. The bulk phase diagram is well described by regular solution theory.||URI:||http://ktisis.cut.ac.cy/handle/10488/7712||ISSN:||0031-9007 (print)
|DOI:||10.1103/PhysRevLett.63.1164||Rights:||© 1989 The American Physical Society.||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
Show full item record
checked on Nov 9, 2018
WEB OF SCIENCETM
checked on Nov 7, 2018
Page view(s) 10105
checked on Nov 15, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.