Please use this identifier to cite or link to this item:
|Title:||The effect of pressure on the radiative efficiency of InAs based light emitting diodes||Authors:||Choulis, Stelios A.
Andreev, Aleksey D.
Merrick, Michael L.
|Keywords:||Light emitting diodes
|Issue Date:||2003||Publisher:||Wiley||Source:||Physica status solidi (B) Basic research, 2003, Volume 235, Issue 2, Pages 312-316||Abstract:||The spontaneous emission of 3.3 μm light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type II structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type II LEDs in contrast to type I lasers where competing radiative processes appear more significant||URI:||http://ktisis.cut.ac.cy/handle/10488/7706||ISSN:||0370-1972 (print)
|DOI:||10.1002/pssb.200301575||Rights:||© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim|
|Appears in Collections:||Άρθρα/Articles|
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.