Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7706
Title: The effect of pressure on the radiative efficiency of InAs based light emitting diodes
Authors: Choulis, Stelios A. 
Andreev, Aleksey D. 
Merrick, Michael L. 
Keywords: Light emitting diodes
Hydrostatic pressure
Issue Date: 2003
Publisher: Wiley
Source: Physica status solidi (B) Basic research, 2003, Volume 235, Issue 2, Pages 312-316
Abstract: The spontaneous emission of 3.3 μm light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type II structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type II LEDs in contrast to type I lasers where competing radiative processes appear more significant
URI: http://ktisis.cut.ac.cy/handle/10488/7706
ISSN: 0370-1972 (print)
1521-3951 (online)
DOI: 10.1002/pssb.200301575
Rights: © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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