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|Title:||Glassy quasithermal distribution of local geometries and defects in quenched amorphous silicon||Authors:||Tersoff, Jerry
Kelires, Pantelis C.
|Keywords:||Geometry;Silicon;Temperature;Energy||Issue Date:||1988||Publisher:||APS American Physical Society||Source:||Physical Review Letters,1988, Volume 61, Issue 5, Pages 562-565||Abstract:||Simulations of amorphous silicon formed by quenching of the liquid indicate that a-Si has a Boltzmann-like distribution of local geometries, corresponding to a "glass temperature" of roughly 700 K. The resulting tetrahedral network exhibits native defects, threefold- and fivefold-coordinated atoms, which have mean formation energies of 0.6 and 0.3 eV, respectively, and which are apparently mobile even at fairly low temperatures. These results are obtained by a novel approach to the analysis, and are relatively insensitive to the empirical interatomic potential used in the simulations.||URI:||http://ktisis.cut.ac.cy/handle/10488/7678||ISSN:||0031-9007 (print)
|DOI:||10.1103/PhysRevLett.61.562||Rights:||© 1988 The American Physical Society.||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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