Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7678
Title: Glassy quasithermal distribution of local geometries and defects in quenched amorphous silicon
Authors: Tersoff, Jerry 
Kelires, Pantelis C. 
Keywords: Geometry
Silicon
Temperature
Energy
Issue Date: 1988
Publisher: APS American Physical Society
Source: Physical Review Letters,1988, Volume 61, Issue 5, Pages 562-565
Abstract: Simulations of amorphous silicon formed by quenching of the liquid indicate that a-Si has a Boltzmann-like distribution of local geometries, corresponding to a "glass temperature" of roughly 700 K. The resulting tetrahedral network exhibits native defects, threefold- and fivefold-coordinated atoms, which have mean formation energies of 0.6 and 0.3 eV, respectively, and which are apparently mobile even at fairly low temperatures. These results are obtained by a novel approach to the analysis, and are relatively insensitive to the empirical interatomic potential used in the simulations.
URI: http://ktisis.cut.ac.cy/handle/10488/7678
ISSN: 0031-9007 (print)
1079-7114 (online)
DOI: 10.1103/PhysRevLett.61.562
Rights: © 1988 The American Physical Society.
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