Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7676
Title: Structural, electronic, and optical properties of strained si1-xgex alloys
Authors: Theodorou, George Os 
Tserbak, C. 
Kelires, Pantelis C. 
Keywords: Alloys
Electronics
Conduction band
Issue Date: 1994
Publisher: APS American Physical Society
Source: Physical Review B,1994, Volume 50, Issue 24, Pages 18355-18359
Abstract: A systematic study of structural, electronic, and optical properties of strained Si1-xGex alloys, coherently grown on a Si(001) surface, is presented. We find that for bulk alloys the lattice constant deviates from Vegards law, while for the strained alloys it deviates from the results of elasticity theory. The strained alloys are indirect gap materials, with the minimum of the conduction band appearing in the [100] direction. We present results for the indirect as well as the direct gaps. Finally, we investigate the optical properties of strained alloys and present results for the critical energies as a function of the concentration of Ge in them.
URI: http://ktisis.cut.ac.cy/handle/10488/7676
ISSN: 0163-1829
DOI: 10.1103/PhysRevB.50.18355
Rights: © 1994 The American Physical Society.
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