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|Title:||High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm||Authors:||Choulis, Stelios A.
Andreev, Aleksey D.
Merrick, Michael L.
|Keywords:||Light emitting diodes;Electroluminescence;Indium compounds;Liquid phase epitaxy;Photolithography;Pressure--Measurement||Issue Date:||2003||Publisher:||American Institute of Physics||Source:||Applied physics letters, 2003, Volume 82, Issue 8, Pages 1149-1151||Abstract:||The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 μm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs||URI:||http://ktisis.cut.ac.cy/handle/10488/7672||ISSN:||0003-6951 (print)
|DOI:||10.1063/1.1555276||Rights:||© 2003 American Institute of Physics||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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