Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7672
Title: High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm
Authors: Choulis, Stelios A. 
Andreev, Aleksey D. 
Merrick, Michael L. 
Keywords: Light emitting diodes
Electroluminescence
Indium compounds
Liquid phase epitaxy
Photolithography
Pressure--Measurement
Issue Date: 2003
Publisher: American Institute of Physics
Source: Applied physics letters, 2003, Volume 82, Issue 8, Pages 1149-1151
Abstract: The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 μm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs
URI: http://ktisis.cut.ac.cy/handle/10488/7672
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.1555276
Rights: © 2003 American Institute of Physics
Appears in Collections:Άρθρα/Articles

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