Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7667
Title: Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasers
Authors: Choulis, Stelios A. 
Tomić, Stanko S. 
Fehse, Robin 
Keywords: Electrons
Nitrogen
Quantum wells
Resonance
Gallium arsenide
Indium compounds
Issue Date: 2002
Publisher: IEEE Xplore
Source: IEEE 18th international semiconductor laser conference, 2002, Pages 41-42
Abstract: By measuring the spontaneous emission from normally operating ∼1.3 μm GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K
URI: http://ktisis.cut.ac.cy/handle/10488/7667
ISBN: 0-7803-7598-X
DOI: 10.1109/ISLC.2002.1041108
Rights: © IEEE
Appears in Collections:Κεφάλαια βιβλίων/Book chapters

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