Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7665
Title: Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies
Authors: Choulis, Stelios A. 
Tomić, Stanko S. 
O'Reilly, Eoin P O 
Keywords: Semiconductors
Modulation spectroscopy
Semiconductor lasers
Binding energy
Issue Date: 2003
Publisher: Elsevier
Source: Solid state communications, 2003, Volume 125, Issues 3–4, Pages 155–159
Abstract: We describe micro-photomodulated reflectance (PR) measurements on a representative dilute-N InGaNAs/GaAs-based laser device structure designed to emit at 1.3 μm. The quantum well (QW) transition energies obtained from PR are modeled using a realistic 10-band k·p Hamiltonian that includes tight-binding-based energies and coupling parameters for the N-levels. From this we are able to determine accurately the band structure and thus predict some important device properties for this InGaNAs/GaAs-based laser device
URI: http://ktisis.cut.ac.cy/handle/10488/7665
ISSN: 0038-1098
DOI: 10.1016/S0038-1098(02)00772-X
Rights: Copyright © 2003 Elsevier Science Ltd. All rights reserved
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