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|Title:||Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies||Authors:||Choulis, Stelios A.
Tomić, Stanko S.
O'Reilly, Eoin P O
|Keywords:||Semiconductors;Modulation spectroscopy;Semiconductor lasers;Binding energy||Issue Date:||2003||Publisher:||Elsevier||Source:||Solid state communications, 2003, Volume 125, Issues 3–4, Pages 155–159||Abstract:||We describe micro-photomodulated reflectance (PR) measurements on a representative dilute-N InGaNAs/GaAs-based laser device structure designed to emit at 1.3 μm. The quantum well (QW) transition energies obtained from PR are modeled using a realistic 10-band k·p Hamiltonian that includes tight-binding-based energies and coupling parameters for the N-levels. From this we are able to determine accurately the band structure and thus predict some important device properties for this InGaNAs/GaAs-based laser device||URI:||http://ktisis.cut.ac.cy/handle/10488/7665||ISSN:||0038-1098||DOI:||http://dx.doi.org/10.1016/S0038-1098(02)00772-X||Rights:||Copyright © 2003 Elsevier Science Ltd. All rights reserved||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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