Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7661
Title: Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy
Authors: Choulis, Stelios A. 
Hosea, Thomas Jeff Cockburn 
Ghosh, Sandip Kumar 
Keywords: Optical pumping;Erbium;Spectroscopy;Gallium arsenide;Indium compounds
Issue Date: 2003
Publisher: IEEE Xplore
Source: IEEE photonics technology letters, 2003, Volume 15, Issue 8, Pages 1026-1028
Abstract: We report electroreflectance (ER) measurements on a dilute-N GaInNAs vertical-cavity surface-emitting laser structure, as a function of temperature T, which probe the coupling between the cavity mode (CM) and a broad quantum-well (QW) ground state exciton. The latter is not separately observable in the ER, but, by monitoring the coupled CM-QW lineshape, we show it has maximum amplitude and is anti-symmetric when the CM and QW energies coincide at a certain T/sub opt/. This predicted T/sub opt/ is confirmed by optically pumped lasing measurements on the same sample
URI: http://ktisis.cut.ac.cy/handle/10488/7661
ISSN: 1041-1135
DOI: 10.1109/LPT.2003.815364
Rights: © IEEE
Type: Article
Appears in Collections:Άρθρα/Articles

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