Please use this identifier to cite or link to this item:
|Title:||Stability and interdiffusion at the a-c/si(100) interface||Authors:||Logothetidis, Stergios D.
Kelires, Pantelis C.
Monte Carlo method
|Issue Date:||1998||Publisher:||Elsevier||Source:||Journal of Non-Crystalline Solids,1998, Volume 227-230, Issue PART 2,Pages 1113-1117||Abstract:||Experimental ellipsometry measurements and theoretical Monte Carlo simulations reveal that interdiffusion takes place during the growth of amorphous carbon layers on Si(100) substrates. Intermixing is shown to be a strain mediated mechanism resulting in partial relief of local stresses both in the amorphous layer, as well as in the substrate layers near the interface.||URI:||http://ktisis.cut.ac.cy/handle/10488/7642||ISSN:||0022-3093||DOI:||10.1016/S0022-3093(98)00291-9||Rights:||© 1998 Elsevier Science B.V. All rights reserved.|
|Appears in Collections:||Άρθρα/Articles|
Show full item record
WEB OF SCIENCETM
checked on Jun 23, 2017
checked on Jun 25, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.