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|Title:||Stability and interdiffusion at the a-c/si(100) interface||Authors:||Logothetidis, Stergios D.
Kelires, Pantelis C.
|Keywords:||Ellipsometry;Carbon;Computer simulation;Monte Carlo method||Issue Date:||1998||Publisher:||Elsevier||Source:||Journal of Non-Crystalline Solids,1998, Volume 227-230, Issue PART 2,Pages 1113-1117||Abstract:||Experimental ellipsometry measurements and theoretical Monte Carlo simulations reveal that interdiffusion takes place during the growth of amorphous carbon layers on Si(100) substrates. Intermixing is shown to be a strain mediated mechanism resulting in partial relief of local stresses both in the amorphous layer, as well as in the substrate layers near the interface.||URI:||http://ktisis.cut.ac.cy/handle/10488/7642||ISSN:||0022-3093||DOI:||http://dx.doi.org/10.1016/S0022-3093(98)00291-9||Rights:||© 1998 Elsevier Science B.V. All rights reserved.||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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