Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7642
Title: Stability and interdiffusion at the a-c/si(100) interface
Authors: Logothetidis, Stergios D. 
Gioti, Maria 
Kelires, Pantelis C. 
Keywords: Ellipsometry;Carbon;Computer simulation;Monte Carlo method
Issue Date: 1998
Publisher: Elsevier
Source: Journal of Non-Crystalline Solids,1998, Volume 227-230, Issue PART 2,Pages 1113-1117
Abstract: Experimental ellipsometry measurements and theoretical Monte Carlo simulations reveal that interdiffusion takes place during the growth of amorphous carbon layers on Si(100) substrates. Intermixing is shown to be a strain mediated mechanism resulting in partial relief of local stresses both in the amorphous layer, as well as in the substrate layers near the interface.
URI: http://ktisis.cut.ac.cy/handle/10488/7642
ISSN: 0022-3093
DOI: http://dx.doi.org/10.1016/S0022-3093(98)00291-9
Rights: © 1998 Elsevier Science B.V. All rights reserved.
Type: Article
Appears in Collections:Άρθρα/Articles

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