Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7631
Title: Interfacial stability and atomistic processes in the a-c/si(100) heterostructure system
Authors: Gioti, Maria 
Logothetidis, Stergios D. 
Kelires, Pantelis C. 
Keywords: Heterostructures
Carbon
Ellipsometry
Issue Date: 1999
Publisher: APS American Physical Society
Source: Physical Review B - Condensed Matter and Materials Physics,1999, Volume 59, Issue 7, Pages 5074-5081
Abstract: We study the interfacial properties of thin amorphous carbon films grown on silicon (100) substrates. By combining experimental spectroscopic ellipsometry and stress measurements and theoretical Monte Carlo simulations, we show that significant interdiffusion takes place at the initial stages of growth, driven by a strain mediated mechanism, and we identify the relevant atomistic processes.
URI: http://ktisis.cut.ac.cy/handle/10488/7631
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.59.5074
Rights: © 1999 The American Physical Society.
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