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|Title:||Interface modification to improve hole-injection properties in organic electronic devices||Authors:||Choulis, Stelios A.
Light emitting diodes
|Issue Date:||2006||Publisher:||Wiley||Source:||Advanced functional materials, 2006, Volume 16, Issue 8, Pages 1075-1080||Abstract:||The performance of organic electronic devices is often limited by injection. In this paper, improvement of hole injection in organic electronic devices by conditioning of the interface between the hole-conducting layer (buffer layer) and the active organic semiconductor layer is demonstrated. The conditioning is performed by spin-coating poly(9,9-dioctyl-fluorene-co-N-(4- butylphenyl)-diphenylamine) (TFB) on top of the poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) buffer layer, followed by an organic solvent wash, which results in a TFB residue on the surface of the PEDOT:PSS. Changes in the hole-injection energy barriers, bulk charge-transport properties, and current-voltage characteristics observed in a representative PFO-based (PFO: poly(9,9-dioctylfluorene)) diode suggest that conditioning of PEDOT:PSS surface with TFB creates a stepped electronic profile that dramatically improves the hole-injection properties of organic electronic devices||URI:||http://ktisis.cut.ac.cy/handle/10488/7618||ISSN:||1616-301X||DOI:||10.1002/adfm.200500443||Rights:||© 2006 WILEY-VCH Verlag GmbH & Co. KGaA|
|Appears in Collections:||Άρθρα/Articles|
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