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|Title:||Effects of topological disorder on phase separation and local order in a-si1-xgex. alloys||Authors:||Tzoumanekas, Christos
Kelires, Pantelis C.
|Keywords:||Alloys;Crystallization||Issue Date:||1999||Publisher:||APS American Physical Society||Source:||Physical Review B - Condensed Matter and Materials Physics,1999, Volume 60, Issue 20, Pages 14205-14208||Abstract:||Monte Carlo simulations show that the inherent tendency for decomposition of the Si-Ge solid mixture is totally suppressed in the amorphous phase. Yet, the distribution of Si and Ge atoms in the network is not random as in the crystal, but there is a strong tendency of homopolar bonds to cluster locally, even at high temperatures. We show that the disorder potential of the amorphous network prevents the percolation of these clusters in segregated regions under thermodynamic equilibrium. However, these homopolar clusters might act as precursors of metastable decomposed regions observed in crystallization processes.||URI:||http://ktisis.cut.ac.cy/handle/10488/7587||ISSN:||1098-0121||DOI:||10.1103/PhysRevB.60.14205||Rights:||© 1999 The American Physical Society.||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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