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|Title:||Stress and composition of c-induced ge dots on si(100)||Authors:||Hadjisavvas, George C.
Kelires, Pantelis C.
|Keywords:||Carbon;Germanium;Silicon;Geometry||Issue Date:||2003||Publisher:||APS American Physical Society||Source:||Physical Review B - Condensed Matter and Materials Physics,2003, Volume 67, Issue 24, Pages 2413021-2413024||Abstract:||Monte Carlo simulations shed light on the stress field and composition of C-induced Ge islands on Si(100). It is shown that the dots do not contain C, under any conditions of temperature and coverage, but have a gradual composition profile from SiGe at the bottom to Ge at the apex. The average compressive stress in the islands is considerably reduced compared to the pure Ge/Si case. At low Ge coverage, the top substrate layer around the dots is enriched with Si-C dimers. At high Ge contents, Ge wets the surface and covers the predeposited C geometries. We predict enhancement of Ge content in the islands upon C incorporation.||URI:||http://ktisis.cut.ac.cy/handle/10488/7584||ISSN:||1098-0121||DOI:||10.1103/PhysRevB.67.241302||Rights:||© 2003 The American Physical Society.||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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