Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7584
Title: Stress and composition of c-induced ge dots on si(100)
Authors: Hadjisavvas, George C. 
Sonnet, Philippe 
Kelires, Pantelis C. 
Keywords: Carbon;Germanium;Silicon;Geometry
Issue Date: 2003
Publisher: APS American Physical Society
Source: Physical Review B - Condensed Matter and Materials Physics,2003, Volume 67, Issue 24, Pages 2413021-2413024
Abstract: Monte Carlo simulations shed light on the stress field and composition of C-induced Ge islands on Si(100). It is shown that the dots do not contain C, under any conditions of temperature and coverage, but have a gradual composition profile from SiGe at the bottom to Ge at the apex. The average compressive stress in the islands is considerably reduced compared to the pure Ge/Si case. At low Ge coverage, the top substrate layer around the dots is enriched with Si-C dimers. At high Ge contents, Ge wets the surface and covers the predeposited C geometries. We predict enhancement of Ge content in the islands upon C incorporation.
URI: http://ktisis.cut.ac.cy/handle/10488/7584
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.67.241302
Rights: © 2003 The American Physical Society.
Type: Article
Appears in Collections:Άρθρα/Articles

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