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|Title:||Strain fields in diamondlike amorphous carbon||Authors:||Kelires, Pantelis C.||Keywords:||Carbon;Silicon;Hybridization;Diffusion||Issue Date:||2000||Publisher:||World Scientific||Source:||International Journal of Modern Physics B,2000, Volume 14, Issue 2-3, Pages 256-267||Abstract:||This paper reviews the fundamental ideas related to the concept of local atomic stresses and their application to the study of strain fields in ta-C. The calculations are based on Monte Carlo simulations within the empirical potential approach. We find that the stress distributions in ta-C are highly inhomogeneous, both in the bulk as well as in the surface and interface regions. There is a close relationship between local stress and hybridization. The most probable stress state for fourfold sites is compression, while threefold sites prefer to be under tension. Local-atomic behavior dominates longer-ranged stress conditions. Interdiffusion following thermal annealing is an important factor for the reduction of compressive stress in ta-C films grown on silicon substrates.||URI:||http://ktisis.cut.ac.cy/handle/10488/7569||ISSN:||0217-9792||DOI:||10.1142/S021797920000025X||Rights:||© World Scientific Publishing Company.||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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