Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7569
Title: Strain fields in diamondlike amorphous carbon
Authors: Kelires, Pantelis C. 
Keywords: Carbon;Silicon;Hybridization;Diffusion
Issue Date: 2000
Publisher: World Scientific
Source: International Journal of Modern Physics B,2000, Volume 14, Issue 2-3, Pages 256-267
Abstract: This paper reviews the fundamental ideas related to the concept of local atomic stresses and their application to the study of strain fields in ta-C. The calculations are based on Monte Carlo simulations within the empirical potential approach. We find that the stress distributions in ta-C are highly inhomogeneous, both in the bulk as well as in the surface and interface regions. There is a close relationship between local stress and hybridization. The most probable stress state for fourfold sites is compression, while threefold sites prefer to be under tension. Local-atomic behavior dominates longer-ranged stress conditions. Interdiffusion following thermal annealing is an important factor for the reduction of compressive stress in ta-C films grown on silicon substrates.
URI: http://ktisis.cut.ac.cy/handle/10488/7569
ISSN: 0217-9792
DOI: 10.1142/S021797920000025X
Rights: © World Scientific Publishing Company.
Type: Article
Appears in Collections:Άρθρα/Articles

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