Please use this identifier to cite or link to this item:
Title: Modeling of the carbon-rich c(4 × 4) reconstruction on si(1 0 0)
Authors: Remediakis, Ioannis N. 
Guedj, Cyril 
Kelires, Pantelis C. 
Keywords: Silicon carbide;Carbon;Computer simulation;Mathematical models;Silicon carbide
Issue Date: 2004
Publisher: Elsevier
Source: Surface Science,2004, Volume 554, Issue 2-3, Pages 90-102
Abstract: The structure and energetics of the carbon-rich c(4×4) surface reconstruction on Si(0 0 1) is studied theoretically. These combined analyses demonstrate that for five or six carbon atoms per c(4×4) unit cell, the configuration involving carbon atoms in second nearest-neighbor positions in subsurface sites is more stable than the first nearest-neighbor configuration, involving a C-C dimer and a missing Si dimer. This SiC-like configuration could account for the formation of 3C-SiC precipitates generally observed during the growth of Si-C alloys for high C concentrations (>3%) and at high temperatures (>650°C).
ISSN: 0039-6028
Rights: © 2004 Elsevier B.V. All rights reserved.
Type: Article
Appears in Collections:Άρθρα/Articles

Show full item record

Citations 20

checked on Feb 13, 2018

Page view(s)

Last Week
Last month
checked on Nov 15, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.