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|Title:||Lattice parameter of si1-x-ygexcy alloys||Authors:||Berti, Marina
Kelires, Pantelis C.
|Issue Date:||2000||Publisher:||APS American Physical Society||Source:||Physical Review B - Condensed Matter and Materials Physics,2000, Volume 61, Issue 19, Pages 13005-13013||Abstract:||The introduction of carbon into silicon-germanium-based heterostructures offers increased flexibility in tailoring their strain state and electronic properties. Still, however, fundamental physical properties such as the lattice parameter and the elastic properties of Si1-x-yGexCy random alloys are not precisely known. In this paper, we present a quantitative study of the effect of carbon on the lattice parameter of Si1-x-yGexCy alloys in the technologically relevant range of Ge and C compositions. A strong deviation from Vegard's rule is experimentally and theoretically derived. The influence of the correlation between Ge and C on the lattice parameter is discussed. The results allow us to establish the compensation ratio ν of Ge to C concentrations (where the Si1-x-yGexCy epilayer is lattice matched to Si), for which we find a value of ν = 12||URI:||http://ktisis.cut.ac.cy/handle/10488/7535||ISSN:||1098-0121||DOI:||10.1103/PhysRevB.61.13005||Rights:||©2000 The American Physical Society.|
|Appears in Collections:||Άρθρα/Articles|
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