Please use this identifier to cite or link to this item:
|Title:||Lattice parameter of si1-x-ygexcy alloys||Authors:||Berti, Marina
Kelires, Pantelis C.
|Issue Date:||2000||Publisher:||APS American Physical Society||Source:||Physical Review B - Condensed Matter and Materials Physics,2000, Volume 61, Issue 19, Pages 13005-13013||Abstract:||The introduction of carbon into silicon-germanium-based heterostructures offers increased flexibility in tailoring their strain state and electronic properties. Still, however, fundamental physical properties such as the lattice parameter and the elastic properties of Si1-x-yGexCy random alloys are not precisely known. In this paper, we present a quantitative study of the effect of carbon on the lattice parameter of Si1-x-yGexCy alloys in the technologically relevant range of Ge and C compositions. A strong deviation from Vegard's rule is experimentally and theoretically derived. The influence of the correlation between Ge and C on the lattice parameter is discussed. The results allow us to establish the compensation ratio ν of Ge to C concentrations (where the Si1-x-yGexCy epilayer is lattice matched to Si), for which we find a value of ν = 12||URI:||http://ktisis.cut.ac.cy/handle/10488/7535||ISSN:||1098-0121||DOI:||10.1103/PhysRevB.61.13005||Rights:||©2000 The American Physical Society.|
|Appears in Collections:||Άρθρα/Articles|
Show full item record
WEB OF SCIENCETM
checked on Jul 24, 2017
checked on Aug 24, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.