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|Title:||Conduction mechanisms of P3HT:PCBM solar cell||Authors:||Nolasco, Jairo C.
|Keywords:||Electric network analysis;Temperature measurements;Solar cells||Issue Date:||2009||Publisher:||IEEE||Source:||Proceedings of the Spanish Conference on Electron Devices CDE, 2009, Pages 398-401||Abstract:||In order to get a deeper understanding of the conduction mechanisms limiting the electrical characteristics of ITO/PEDOT:PSS/P3HT:PCBM/Al solar cells, dark current-voltage measurements at different temperatures were analyzed using a compact electrical equivalent circuit previously used in p/n junctions. Between 0.2 V and 0.6 V, the current-voltage characteristic is modeled by an exponential term which can be described by Multi-Tunneling Capture Emission process. For larger voltage, the model takes into account Space-Charge Limited process and series resistance. In addition, the model is useful to calculate the built in potential of the solar cell using only dark current- voltage-temperature measurements.||URI:||http://ktisis.cut.ac.cy/handle/10488/7491||ISBN:||978-142442839-7||DOI:||10.1109/SCED.2009.4800517||Rights:||© 2009 IEEE||Type:||Book Chapter|
|Appears in Collections:||Κεφάλαια βιβλίων/Book chapters|
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