Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7491
Title: Conduction mechanisms of P3HT:PCBM solar cell
Authors: Nolasco, Jairo C. 
Pacios, Roberto 
Neophytou, Marios 
Keywords: Electric network analysis
Temperature measurements
Solar cells
Issue Date: 2009
Publisher: IEEE
Source: Proceedings of the Spanish Conference on Electron Devices CDE, 2009, Pages 398-401
Abstract: In order to get a deeper understanding of the conduction mechanisms limiting the electrical characteristics of ITO/PEDOT:PSS/P3HT:PCBM/Al solar cells, dark current-voltage measurements at different temperatures were analyzed using a compact electrical equivalent circuit previously used in p/n junctions. Between 0.2 V and 0.6 V, the current-voltage characteristic is modeled by an exponential term which can be described by Multi-Tunneling Capture Emission process. For larger voltage, the model takes into account Space-Charge Limited process and series resistance. In addition, the model is useful to calculate the built in potential of the solar cell using only dark current- voltage-temperature measurements.
URI: http://ktisis.cut.ac.cy/handle/10488/7491
ISBN: 978-142442839-7
DOI: 10.1109/SCED.2009.4800517
Rights: © 2009 IEEE
Appears in Collections:Κεφάλαια βιβλίων/Book chapters

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