Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7459
Title: A constrained-equilibrium Monte Carlo method for quantum dots - the problem of intermixing
Authors: Kelires, Pantelis C. 
Keywords: Chemical bonds
Computer simulation
Depositions
Optoelectronic devices
Diffusion
Issue Date: 2004
Publisher: Iop Science
Source: Journal of Physics Condensed Matter Volume, 2004, 16, Issue 17, Pages S1485-S1501
Abstract: Islands grown during semiconductor heteroepitaxy are in a thermodynamically metastable state. Experiments show that diffusion at the surface region, including the interior of the islands, is fast enough to establish local equilibrium. I review here applications of a Monte Carlo method which takes advantage of the quasi-equilibrium nature of quantum dots and is able to address the issue of intermixing and island composition. Both, Ge islands grown on the bare Si(100) surface and C-induced Ge islands grown on Si(100) precovered with C are discussed. In the bare case, the interlinking of the stress field with the composition is revealed. Both are strongly inhomogeneous. In the C-induced case, the interplay of strain and chemical effects is the dominant key factor. Islands do not contain C under any conditions of coverage and temperature.
URI: http://ktisis.cut.ac.cy/handle/10488/7459
ISSN: 0953-8984 (print)
1361-648X (online)
DOI: 10.1088/0953-8984/16/17/004
Rights: © 2004 IOP Publishing Ltd.
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