Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7449
Title: Monte Carlo studies of stress fields and intermixing in ge/si(100) quantum dots
Authors: Sonnet, Philippe 
Kelires, Pantelis C. 
Keywords: Germanium
Silicon
Chemical analysis
Electronics
Monte Carlo method
Quantum theory
Issue Date: 2002
Publisher: APS American Physical Society
Source: Physical Review B - Condensed Matter and Materials Physics,2002, Volume 66, Issue 20,Pages 2053071-2053076
Abstract: Intermixing in islands grown on semiconductor surfaces is an important effect, because it drastically alters the optoelectronic properties. Here, we demonstrate a direct simulational approach, based on the Monte Carlo method, which is able to extract with quantitative accuracy the composition profiles in quantum dots, and link them to the stress field. We apply this approach to Ge/Si pyramidal islands. We find that the profiles are not homogeneous, but show strong variations in both the lateral and vertical directions. Outstanding features, such as Si-rich rings in the island layers, are directly linked to the stress pattern. A limiting behavior of composition as a function of temperature and island size is predicted.
URI: http://ktisis.cut.ac.cy/handle/10488/7449
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.66.205307
Rights: © 2002 The American Physical Society.
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