Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7407
Title: Nondestructive evaluation of metal contaminated silicon wafers using radiometric measurements
Authors: Kalli, Kyriacos 
Christofidès, Constantinos
Othonos, Andreas S. 
Tardiff, F.
Keywords: Semiconductor doping;Silicon;Surface contamination;Nondestructive testing;Photothermal spectroscopy
Issue Date: 1999
Publisher: AIP American Institute of Physics Inc.
Source: Journal of Applied Physics,1999, Volume 86, Issue 6,Pages 3064-3067
Abstract: Metal contaminated silicon wafers were examined using nondestructive methods based on photothermal radiometry. This approach relies on measuring the blackbody radiation emitted from a material excited by a modulated laser source. Information is recovered regarding the electronic and thermal properties of the semiconductor as a function of laser modulation frequency. Data collected as a function of modulation frequency and time show clear distinctions between different samples. The sensitivity to different forms of metallic contamination is examined.
URI: http://ktisis.cut.ac.cy/handle/10488/7407
ISSN: 0021-8979 (print)
1089-7550 (online)
DOI: 10.1063/1.371168
Rights: © 1999 American Institute of Physics.
Type: Article
Appears in Collections:Άρθρα/Articles

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