Please use this identifier to cite or link to this item:
Title: Nondestructive evaluation of metal contaminated silicon wafers using radiometric measurements
Authors: Kalli, Kyriacos 
Christofidès, Constantinos
Othonos, Andreas S. 
Tardiff, F.
Keywords: Semiconductor doping
Surface contamination
Nondestructive testing
Photothermal spectroscopy
Issue Date: 1999
Publisher: AIP American Institute of Physics Inc.
Source: Journal of Applied Physics,1999, Volume 86, Issue 6,Pages 3064-3067
Abstract: Metal contaminated silicon wafers were examined using nondestructive methods based on photothermal radiometry. This approach relies on measuring the blackbody radiation emitted from a material excited by a modulated laser source. Information is recovered regarding the electronic and thermal properties of the semiconductor as a function of laser modulation frequency. Data collected as a function of modulation frequency and time show clear distinctions between different samples. The sensitivity to different forms of metallic contamination is examined.
ISSN: 0021-8979 (print)
1089-7550 (online)
DOI: 10.1063/1.371168
Rights: © 1999 American Institute of Physics.
Appears in Collections:Άρθρα/Articles

Show full item record

Page view(s)

checked on Jan 30, 2017

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.