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|Title:||Conducting transition metal nitride thin films with tailored cell sizes: the case of δ-TixTa1−xN||Authors:||Abadias, Gregory
Lekka, Christina E.
Koutsokeras, Loukas E.
|Keywords:||Cells--Growth;Liquid phase epitaxy;Metals;Nitrides;Tantalum;Molecular beam epitaxy||Issue Date:||2008||Publisher:||American Institute of Physics||Source:||Applied physics letters, 2008, Volume 93, Issue 1, Pages 1-3||Abstract:||We present results on the stability and tailoring of the cell size of conducting δ- Tix Ta1-x N obtained by film growth and ab initio calculations. Despite the limited solubility of Ta in Ti, we show that TiN and TaN are soluble due to the hybrization of the d and sp electrons of the metal and N, respectively, that stabilizes the ternary system to the rocksalt structure. The stress-free cell sizes follow the Vegard's rule; nevertheless, process-dependent stresses expand the cell size of the as-grown films. The electronic properties of δ- Tix Ta1-x N films (ρ =180 cm) are similar to those of TiN and TaN||URI:||http://ktisis.cut.ac.cy/handle/10488/7363||ISSN:||0003-6951 (print)
|DOI:||10.1063/1.2955838||Rights:||© 2008 American Institute of Physics||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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