Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/7363
Title: Conducting transition metal nitride thin films with tailored cell sizes: the case of δ-TixTa1−xN
Authors: Abadias, Gregory
Lekka, Christina E.
Koutsokeras, Loukas E. 
Keywords: Cells--Growth;Liquid phase epitaxy;Metals;Nitrides;Tantalum;Molecular beam epitaxy
Issue Date: 2008
Publisher: American Institute of Physics
Source: Applied physics letters, 2008, Volume 93, Issue 1, Pages 1-3
Abstract: We present results on the stability and tailoring of the cell size of conducting δ- Tix Ta1-x N obtained by film growth and ab initio calculations. Despite the limited solubility of Ta in Ti, we show that TiN and TaN are soluble due to the hybrization of the d and sp electrons of the metal and N, respectively, that stabilizes the ternary system to the rocksalt structure. The stress-free cell sizes follow the Vegard's rule; nevertheless, process-dependent stresses expand the cell size of the as-grown films. The electronic properties of δ- Tix Ta1-x N films (ρ =180 cm) are similar to those of TiN and TaN
URI: http://ktisis.cut.ac.cy/handle/10488/7363
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.2955838
Rights: © 2008 American Institute of Physics
Type: Article
Appears in Collections:Άρθρα/Articles

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