Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/1117
Title: Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates
Authors: Kelaidis, N.
Ioannou-Sougleridis, Vassilios
Tsamis, Christos
Krontiras, Christoforos A.
Georga, Stavroula N.
Kellerman, Bruce K.
Seacrist, Mike R.
Skarlatos, Dimitrios 
Keywords: Strained-Silicon
Oxidation
Thermal budget
Oxynitridation
Issue Date: 2008
Publisher: Elsevier B.V.
Source: Thin Solid Films. Volume 517, Issue 1, 3 November 2008, Pages 350-352
Abstract: In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si1 − xGex/Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N2O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures.
URI: http://ktisis.cut.ac.cy/handle/10488/1117
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2008.08.111
Rights: © 2008 Elsevier B.V.
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