Please use this identifier to cite or link to this item: http://ktisis.cut.ac.cy/handle/10488/10533
Title: The effect of hole transporting layer in charge accumulation properties of p-i-n perovskite solar cells
Authors: Galatopoulos, Fedros 
Savva, Achilleas 
Papadas, Ioannis T. 
Choulis, Stelios A. 
Keywords: Low-Temperature;Efficiency;Trihalide;Performance;Mobilities;Stability;Growth;Films
Category: Nano-Technology
Field: Engineering and Technology
Issue Date: 1-Jul-2017
Publisher: American Institute of Physics
Source: APL MATERIALS, Volume: 5, Issue: 7, Article Number: 076102, Published: JUL 2017
metadata.dc.doi: http://dx.doi.org/10.1063/1.4991030
Journal: APL Materials
Abstract: The charge accumulation properties of p-i-n perovskite solar cells were investi- gated using three representative organic and inorganic hole transporting layer (HTL): (a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS, Al 4083), (b) copper-doped nickel oxide (Cu:NiOx), and (c) Copper oxide (CuO). Through impedance spectroscopy analysis and modelling, it is shown that charge accumula- tion is decreased in the HTL/perovskite interface, between PEDOT:PSS to Cu:NiOx and CuO. This was indicative from the decrease in double layer capacitance (Cdl) and interfacial charge accumulation capacitance (Cel), resulting in an increase to recom- bination resistance (Rrec), thus decreased charge recombination events between the three HTLs. Through AFM measurements, it is also shown that the reduced recom- bination events (followed by the increase in Rrec) are also a result of increased grain size between the three HTLs, thus reduction in the grain boundary area. These charge accumulation properties of the three HTLs have resulted in an increase to the power conversion efficiency between the PEDOT:PSS (8.44%), Cu:NiOx (11.45%), and CuO (15.3%)-based devices.
URI: http://ktisis.cut.ac.cy/handle/10488/10533
ISSN: 2166-532X
Rights: ©2017 Author(s).
Type: Article
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