Hosea, Thomas Jeff Cockburn (rp00767)

Publications



Results 1-6 of 6 (Search time: 0.012 seconds).

Issue DateTitleAuthor(s)
12001Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studiesChoulis, Stelios A. ; Weinstein, Bernard A. ; Hosea, Thomas Jeff Cockburn 
22002Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studiesChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S. 
32001Growth characterisation of InxGa1-xAs/GaAs/AIAs vertical-cavity surface-emitting laser structure using photomodulated reflectanceChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn 
42001Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasersChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Klar, Peter J. 
52003Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopyChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Ghosh, Sandip Kumar 
62003Pressure and k · p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wellsChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S.