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Date Issued:  [2000 TO 2009]
Type:  Article

Results 41-46 of 46 (Search time: 0.002 seconds).

Issue DateTitleAuthor(s)
4130-Jan-2003Pressure and k · p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wellsChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S. 
42Jan-2003Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studiesChoulis, Stelios A. ; Tomić, Stanko S. ; O'Reilly, Eoin P O 
4330-Oct-2002Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studiesChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S. 
4419-Dec-2001Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasersChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Klar, Peter J. 
459-Jan-2001Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studiesChoulis, Stelios A. ; Weinstein, Bernard A. ; Hosea, Thomas Jeff Cockburn 
462001Growth characterisation of InxGa1-xAs/GaAs/AIAs vertical-cavity surface-emitting laser structure using photomodulated reflectanceChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn