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Ktisis Cyprus University of Technology
Research Outputs
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Hosea, Thomas Jeff Cockburn
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Showing results 1 to 6 of 6
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Issue Date
Title
Author(s)
9-Jan-2001
Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studies
Choulis, Stelios A.
; Weinstein, Bernard A.
; Hosea, Thomas Jeff Cockburn
30-Oct-2002
Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies
Choulis, Stelios A.
; Hosea, Thomas Jeff Cockburn
; Tomić, Stanko S.
2001
Growth characterisation of InxGa1-xAs/GaAs/AIAs vertical-cavity surface-emitting laser structure using photomodulated reflectance
Choulis, Stelios A.
; Hosea, Thomas Jeff Cockburn
19-Dec-2001
Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers
Choulis, Stelios A.
; Hosea, Thomas Jeff Cockburn
; Klar, Peter J.
Aug-2003
Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy
Choulis, Stelios A.
; Hosea, Thomas Jeff Cockburn
; Ghosh, Sandip Kumar
30-Jan-2003
Pressure and k · p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wells
Choulis, Stelios A.
; Hosea, Thomas Jeff Cockburn
; Tomić, Stanko S.
